2N6109
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- Mfr.Part #
- 2N6109
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP 50V 7A TO220
- Stock
- 4,389
- In Stock ：
- 4,389
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 2 Weeks
- Collector Emitter Voltage (VCEO) :
- 50V
- Current Rating :
- 7A
- Power Dissipation :
- 40W
- Collector Base Voltage (VCBO) :
- 60V
- Vce Saturation (Max) @ Ib, Ic :
- 3.5V @ 3A, 7A
- Published :
- 2003
- REACH SVHC :
- No SVHC
- Gain Bandwidth Product :
- 10MHz
- Base Part Number :
- 2N6109
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 50V
- Max Power Dissipation :
- 40W
- Additional Feature :
- LEADFORM OPTIONS ARE AVAILABLE
- Weight :
- 4.535924g
- Voltage - Rated DC :
- -50V
- Height :
- 15.75mm
- Lead Free :
- Lead Free
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Max Collector Current :
- 7A
- JESD-609 Code :
- e3
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Type :
- PNP
- Package / Case :
- TO-220-3
- Operating Temperature :
- -65°C~150°C TJ
- Current - Collector Cutoff (Max) :
- 1mA
- hFE Min :
- 30
- Polarity/Channel Type :
- PNP
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Packaging :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JEDEC-95 Code :
- TO-220AB
- Length :
- 10.28mm
- Case Connection :
- COLLECTOR
- Width :
- 4.82mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 2.5A 4V
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Transition Frequency :
- 10MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Frequency :
- 10MHz
- Contact Plating :
- Tin
- Surface Mount :
- No
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Collector Emitter Saturation Voltage :
- 3.5V
- Datasheets
- 2N6109
PNP -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole
2N6109G Overview
In this device, the DC current gain is 30 @ 2.5A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 3.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3.5V @ 3A, 7A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 7A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 10MHz.Single BJT transistor is possible for the collector current to fall as low as 7A volts at Single BJT transistors maximum.
2N6109G Features
the DC current gain for this device is 30 @ 2.5A 4V
a collector emitter saturation voltage of 3.5V
the vce saturation(Max) is 3.5V @ 3A, 7A
the emitter base voltage is kept at 5V
the current rating of this device is 7A
a transition frequency of 10MHz
2N6109G Applications
There are a lot of ON Semiconductor
2N6109G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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