2N6109
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- Mfr.Part #
- 2N6109
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP 50V 7A TO220
- Stock
- 4,389
- In Stock ：
- 4,389
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Length :
- 10.28mm
- hFE Min :
- 30
- Radiation Hardening :
- No
- Peak Reflow Temperature (Cel) :
- 260
- Element Configuration :
- Single
- Number of Elements :
- 1
- Contact Plating :
- Tin
- Transition Frequency :
- 10MHz
- Number of Pins :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Vce Saturation (Max) @ Ib, Ic :
- 3.5V @ 3A, 7A
- Collector Base Voltage (VCBO) :
- 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 2.5A 4V
- JESD-609 Code :
- e3
- Collector Emitter Breakdown Voltage :
- 50V
- Width :
- 4.82mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- PNP
- Mounting Type :
- Through Hole
- Factory Lead Time :
- 2 Weeks
- Surface Mount :
- No
- Power Dissipation :
- 40W
- Voltage - Rated DC :
- -50V
- Base Part Number :
- 2N6109
- Weight :
- 4.535924g
- Emitter Base Voltage (VEBO) :
- 5V
- Operating Temperature :
- -65°C~150°C TJ
- Published :
- 2003
- Transistor Element Material :
- SILICON
- Current Rating :
- 7A
- Pbfree Code :
- yes
- Current - Collector Cutoff (Max) :
- 1mA
- Max Power Dissipation :
- 40W
- Number of Terminations :
- 3
- Package / Case :
- TO-220-3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Saturation Voltage :
- 3.5V
- Max Collector Current :
- 7A
- REACH SVHC :
- No SVHC
- Case Connection :
- COLLECTOR
- Collector Emitter Voltage (VCEO) :
- 50V
- Additional Feature :
- LEADFORM OPTIONS ARE AVAILABLE
- Pin Count :
- 3
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Packaging :
- Tube
- Height :
- 15.75mm
- Frequency :
- 10MHz
- Gain Bandwidth Product :
- 10MHz
- JEDEC-95 Code :
- TO-220AB
- Transistor Application :
- SWITCHING
- Transistor Type :
- PNP
- Datasheets
- 2N6109
PNP -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole
2N6109G Overview
In this device, the DC current gain is 30 @ 2.5A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 3.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3.5V @ 3A, 7A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 7A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 10MHz.Single BJT transistor is possible for the collector current to fall as low as 7A volts at Single BJT transistors maximum.
2N6109G Features
the DC current gain for this device is 30 @ 2.5A 4V
a collector emitter saturation voltage of 3.5V
the vce saturation(Max) is 3.5V @ 3A, 7A
the emitter base voltage is kept at 5V
the current rating of this device is 7A
a transition frequency of 10MHz
2N6109G Applications
There are a lot of ON Semiconductor
2N6109G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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