2N6109

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Transition Frequency :

10MHz

Collector Base Voltage (VCBO) :

60V

Packaging :

Tube

Power Dissipation :

40W

Package / Case :

TO-220-3

Gain Bandwidth Product :

10MHz

Max Collector Current :

7A

hFE Min :

30

Time@Peak Reflow Temperature-Max (s) :

40

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 2.5A 4V

Surface Mount :

No

Length :

10.28mm

ECCN Code :

EAR99

Factory Lead Time :

2 Weeks

Frequency :

10MHz

Base Part Number :

2N6109

Contact Plating :

Tin

JESD-609 Code :

e3

Current - Collector Cutoff (Max) :

1mA

Emitter Base Voltage (VEBO) :

5V

Element Configuration :

Single

Transistor Element Material :

SILICON

Case Connection :

COLLECTOR

Lead Free :

Lead Free

Transistor Type :

PNP

Voltage - Rated DC :

-50V

Radiation Hardening :

No

Weight :

4.535924g

Operating Temperature :

-65°C~150°C TJ

Max Power Dissipation :

40W

JEDEC-95 Code :

TO-220AB

Additional Feature :

LEADFORM OPTIONS ARE AVAILABLE

Mounting Type :

Through Hole

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Collector Emitter Voltage (VCEO) :

50V

Published :

2003

Current Rating :

7A

Transistor Application :

SWITCHING

Pbfree Code :

yes

Number of Pins :

3

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Collector Emitter Saturation Voltage :

3.5V

Peak Reflow Temperature (Cel) :

260

Vce Saturation (Max) @ Ib, Ic :

3.5V @ 3A, 7A

Height :

15.75mm

Number of Terminations :

3

Polarity/Channel Type :

PNP

Collector Emitter Breakdown Voltage :

50V

Number of Elements :

1

Width :

4.82mm

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)