2N6036
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- Mfr.Part #
- 2N6036
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 80V 4A TO126
- Stock
- 15
- In Stock ：
- 15
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Current Rating :
- -4A
- Number of Terminations :
- 3
- Packaging :
- Bulk
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 2 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 40mA, 4A
- Polarity :
- PNP
- Peak Reflow Temperature (Cel) :
- 260
- Width :
- 6.35mm
- Lead Free :
- Lead Free
- Transition Frequency :
- 25MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2008
- Contact Plating :
- Tin
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 2A 3V
- Operating Temperature :
- -65°C~150°C TJ
- Length :
- 8.89mm
- Max Collector Current :
- 4A
- Current - Collector Cutoff (Max) :
- 100μA
- JESD-609 Code :
- e3
- Collector Emitter Breakdown Voltage :
- 80V
- Transistor Application :
- AMPLIFIER
- Radiation Hardening :
- No
- Transistor Type :
- PNP - Darlington
- Emitter Base Voltage (VEBO) :
- 5V
- Weight :
- 4.535924g
- Base Part Number :
- 2N6036
- Power Dissipation :
- 40W
- Voltage - Rated DC :
- -80V
- REACH SVHC :
- No SVHC
- Collector Emitter Voltage (VCEO) :
- 80V
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Halogen Free :
- Halogen Free
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- Pbfree Code :
- yes
- Collector Emitter Saturation Voltage :
- 2V
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 40W
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Pin Count :
- 3
- Package / Case :
- TO-225AA, TO-126-3
- Surface Mount :
- No
- Height :
- 6.35mm
- Continuous Collector Current :
- 4A
- Collector Base Voltage (VCBO) :
- 80V
- Datasheets
- 2N6036
PNP - Darlington -65°C~150°C TJ 100μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Bulk Through Hole
2N6036G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 750 @ 2A 3V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3V @ 40mA, 4A.Continuous collector voltages of 4A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -4A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 25MHz.During maximum operation, collector current can be as low as 4A volts.
2N6036G Features
the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 25MHz
2N6036G Applications
There are a lot of ON Semiconductor
2N6036G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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