2N5830

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Elements :

1

Voltage - Collector Emitter Breakdown (Max) :

100V

Terminal Position :

BOTTOM

Surface Mount :

No

JESD-30 Code :

O-PBCY-T3

Transistor Type :

NPN

Peak Reflow Temperature (Cel) :

Not Applicable

Vce Saturation (Max) @ Ib, Ic :

250mV @ 5mA, 50mA

Transistor Application :

AMPLIFIER

RoHS Status :

ROHS3 Compliant

Current - Collector (Ic) (Max) :

200mA

Current - Collector Cutoff (Max) :

50nA ICBO

JESD-609 Code :

e1

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Power - Max :

625mW

Polarity/Channel Type :

NPN

Operating Temperature :

-55°C~150°C TJ

Packaging :

Bulk

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA 5V

Configuration :

Single

Mounting Type :

Through Hole

Terminal Finish :

TIN SILVER COPPER

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Transistor Element Material :

SILICON

Qualification Status :

COMMERCIAL