2N5560

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Mfr.Part #
2N5560
Manufacturer
Microchip Technology
Package / Case
TO-211MB, TO-63-4, Stud
Datasheet
Download
Description
POWER BJT
Stock
48,317
In Stock :
48,317

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Manufacturer :
Microchip Technology
Product Category :
Transistors - Bipolar (BJT) - Single
Power - Max :
150 W
Transistor Polarity :
NPN
Qualification Status :
Not Qualified
JEDEC-95 Code :
TO-63
Product Status :
Active
Voltage - Collector Emitter Breakdown (Max) :
120 V
Terminal Finish :
TIN LEAD
Transistor Element Material :
SILICON
Operating Temperature :
-65°C ~ 200°C (TJ)
Package / Case :
TO-211MB, TO-63-4, Stud
Subcategory :
Transistors
Collector-Emitter Voltage-Max :
120 V
DC Current Gain-Min (hFE) :
30
Collector Current-Max (IC) :
30 A
Supplier Device Package :
TO-63
JESD-609 Code :
e0
Surface Mount :
No
Terminal Form :
UNSPECIFIED
Package Shape :
Round
Terminal Position :
UPPER
Transistor Type :
PNP
Product Category :
Bipolar Transistors - BJT
Current - Collector Cutoff (Max) :
-
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
ECCN Code :
EAR99
Current - Collector (Ic) (Max) :
30 A
Series :
-
Pbfree Code :
No
Technology :
Si
Brand :
Microchip Technology
Polarity/Channel Type :
NPN
Product Type :
BJTs - Bipolar Transistors
HTS Code :
8541.29.00.95
Configuration :
Single
Number of Terminals :
3
Package :
Bulk
Manufacturer :
Microchip
Vce Saturation (Max) @ Ib, Ic :
-
JESD-30 Code :
O-MUPM-X3
Mounting Type :
Stud Mount
Pin Count :
3
Frequency - Transition :
-
Number of Elements :
1
Reach Compliance Code :
Compliant
DC Current Gain (hFE) (Min) @ Ic, Vce :
-
Datasheets
2N5560
Introducing Transistors - Bipolar (BJT) - Single Microchip Technology 2N5560 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-65°C ~ 200°C (TJ), Package / Case:TO-211MB, TO-63-4, Stud, Mounting Type:Stud Mount, 2N5560 pinout, 2N5560 datasheet PDF, 2N5560 amp .Beyond Transistors - Bipolar (BJT) - Single Microchip Technology 2N5560 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



PNP -65°C ~ 200°C (TJ) - 1 Elements SILICON NPN TO-211MB, TO-63-4, Stud Stud Mount

2N5560 Overview


This device has a DC current gain of -, which is the ratio between the base current and the collector current.A VCE saturation (Max) of - means Ic has reached its maximum value(saturated).Product package TO-63 comes from the supplier.120 V is the maximization voltage for the collector-emitter.Collector Emitter Breakdown occurs at 120 VV - Maximum voltage.

2N5560 Features


the DC current gain for this device is -
the vce saturation(Max) is -
the supplier device package of TO-63


2N5560 Applications


There are a lot of Microchip Technology
2N5560 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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