2N5551TFR

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Emitter Base Voltage (VEBO) :

6V

Max Power Dissipation :

625mW

Transistor Application :

AMPLIFIER

Terminal Position :

BOTTOM

Collector Base Voltage (VCBO) :

180V

ECCN Code :

EAR99

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Voltage - Rated DC :

160V

Transistor Type :

NPN

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

Mount :

Through Hole

Element Configuration :

Single

Factory Lead Time :

6 Weeks

Number of Elements :

1

Number of Terminations :

3

JESD-609 Code :

e3

Collector Emitter Breakdown Voltage :

160V

Vce Saturation (Max) @ Ib, Ic :

200mV @ 5mA, 50mA

Mounting Type :

Through Hole

Transition Frequency :

100MHz

Contact Plating :

Tin

Current - Collector Cutoff (Max) :

50nA ICBO

Collector Emitter Saturation Voltage :

200mV

Frequency :

300MHz

Gain Bandwidth Product :

300MHz

Pbfree Code :

yes

Current Rating :

600mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Packaging :

Tape and Reel (TR)

Collector Emitter Voltage (VCEO) :

160V

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA 5V

RoHS Status :

ROHS3 Compliant

Frequency - Transition :

100MHz

Weight :

240mg

Radiation Hardening :

No

Base Part Number :

2N5551

Max Collector Current :

600mA

Max Breakdown Voltage :

160V

Published :

2007

Transistor Element Material :

SILICON

Power Dissipation :

625mW

hFE Min :

80

Polarity/Channel Type :

NPN