2N5551TF
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- Mfr.Part #
- 2N5551TF
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- 2N5551 - SMALL SIGNAL BIPOLAR TR
- Stock
- 38,109
- In Stock ：
- 38,109
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency - Transition :
- 100MHz
- Height :
- 5.33mm
- Gain Bandwidth Product :
- 300MHz
- Polarity/Channel Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- AMPLIFIER
- Operating Temperature :
- -55°C~150°C TJ
- Current Rating :
- 600mA
- Base Part Number :
- 2N5551
- Factory Lead Time :
- 7 Weeks
- Length :
- 5.2mm
- Frequency :
- 300MHz
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- 6V
- Weight :
- 240mg
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Mount :
- Through Hole
- Terminal Position :
- BOTTOM
- Radiation Hardening :
- No
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- hFE Min :
- 80
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Packaging :
- Tape and Reel (TR)
- Element Configuration :
- Single
- Contact Plating :
- Tin
- Transistor Type :
- NPN
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 5mA, 50mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 10mA 5V
- Transition Frequency :
- 100MHz
- Max Breakdown Voltage :
- 160V
- Voltage - Rated DC :
- 160V
- Pbfree Code :
- yes
- Max Collector Current :
- 600mA
- Collector Emitter Voltage (VCEO) :
- 160V
- Collector Base Voltage (VCBO) :
- 180V
- Collector Emitter Breakdown Voltage :
- 160V
- Transistor Element Material :
- SILICON
- Width :
- 4.19mm
- Power Dissipation :
- 625mW
- Published :
- 2007
- Max Power Dissipation :
- 625mW
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Collector Emitter Saturation Voltage :
- 200mV
- Datasheets
- 2N5551TF
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
2N5551TF Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 80 @ 10mA 5V DC current gain.As it features a collector emitter saturation voltage of 200mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 160V volts.When collector current reaches its maximum, it can reach 600mA volts.
2N5551TF Features
the DC current gain for this device is 80 @ 10mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 100MHz
2N5551TF Applications
There are a lot of ON Semiconductor
2N5551TF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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