2N5551RLRM

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Transition Frequency :

100MHz

JESD-609 Code :

e0

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

30

Current - Collector Cutoff (Max) :

50nA ICBO

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity/Channel Type :

NPN

RoHS Status :

Non-RoHS Compliant

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Surface Mount :

No

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA 5V

Terminal Position :

BOTTOM

Transistor Type :

NPN

Mounting Type :

Through Hole

Terminal Finish :

TIN LEAD

Vce Saturation (Max) @ Ib, Ic :

200mV @ 5mA, 50mA

Number of Elements :

1

Pbfree Code :

No

Transistor Element Material :

SILICON

Voltage - Collector Emitter Breakdown (Max) :

160V

Power - Max :

625mW

JESD-30 Code :

O-PBCY-T3

Number of Terminations :

3

Frequency - Transition :

300MHz

Packaging :

Tape and Box (TB)

Configuration :

Single

Pin Count :

3

Peak Reflow Temperature (Cel) :

240

Current - Collector (Ic) (Max) :

600mA

Qualification Status :

COMMERCIAL

Transistor Application :

AMPLIFIER