2N5551RLRA

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Mounting Type :

Through Hole

JESD-609 Code :

e0

Terminal Position :

BOTTOM

Transistor Type :

NPN

Configuration :

Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA 5V

Transistor Element Material :

SILICON

Vce Saturation (Max) @ Ib, Ic :

200mV @ 5mA, 50mA

Qualification Status :

COMMERCIAL

Current - Collector Cutoff (Max) :

50nA ICBO

Number of Elements :

1

Surface Mount :

No

Transition Frequency :

100MHz

Time@Peak Reflow Temperature-Max (s) :

30

Peak Reflow Temperature (Cel) :

240

Voltage - Collector Emitter Breakdown (Max) :

160V

Operating Temperature :

-55°C~150°C TJ

Frequency - Transition :

300MHz

RoHS Status :

Non-RoHS Compliant

Packaging :

Tape and Reel (TR)

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

JESD-30 Code :

O-PBCY-T3

Terminal Finish :

TIN LEAD

Polarity/Channel Type :

NPN

Pbfree Code :

No

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector (Ic) (Max) :

600mA

Pin Count :

3

Power - Max :

625mW

Transistor Application :

AMPLIFIER