2N5551RL1
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- Mfr.Part #
- 2N5551RL1
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 160V 0.6A TO92
- Stock
- 22,277
- In Stock ：
- 22,277
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current Rating :
- 600mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 10mA 5V
- JESD-609 Code :
- e0
- JESD-30 Code :
- O-PBCY-T3
- Max Collector Current :
- 600mA
- Base Part Number :
- 2N5551
- Transition Frequency :
- 100MHz
- Peak Reflow Temperature (Cel) :
- 240
- Max Power Dissipation :
- 625mW
- Mount :
- Through Hole
- Voltage - Rated DC :
- 160V
- Collector Emitter Breakdown Voltage :
- 160V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- hFE Min :
- 80
- Qualification Status :
- Not Qualified
- Transistor Application :
- AMPLIFIER
- Additional Feature :
- EUROPEAN PART NUMBER
- Collector Emitter Voltage (VCEO) :
- 200mV
- Element Configuration :
- Single
- Reach Compliance Code :
- not_compliant
- HTS Code :
- 8541.21.00.95
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 5mA, 50mA
- Terminal Position :
- BOTTOM
- Collector Base Voltage (VCBO) :
- 180V
- RoHS Status :
- Non-RoHS Compliant
- Transistor Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Gain Bandwidth Product :
- 300MHz
- Pin Count :
- 3
- Collector Emitter Saturation Voltage :
- 250mV
- Number of Elements :
- 1
- Mounting Type :
- Through Hole
- Published :
- 2006
- Packaging :
- Tape and Reel (TR)
- Polarity/Channel Type :
- NPN
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Lead Free :
- Contains Lead
- Emitter Base Voltage (VEBO) :
- 6V
- Datasheets
- 2N5551RL1
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
2N5551RL1 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 80 @ 10mA 5V.The collector emitter saturation voltage is 250mV, which allows for maximum design flexibility.When VCE saturation is 200mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 600mA.In the part, the transition frequency is 100MHz.A maximum collector current of 600mA volts can be achieved.
2N5551RL1 Features
the DC current gain for this device is 80 @ 10mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 200mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 100MHz
2N5551RL1 Applications
There are a lot of ON Semiconductor
2N5551RL1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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