2N5551BU
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- Mfr.Part #
- 2N5551BU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- 2N5551 - SMALL SIGNAL BIPOLAR TR
- Stock
- 93,949
- In Stock ：
- 93,949
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 100MHz
- Collector Emitter Saturation Voltage :
- 200mV
- Frequency - Transition :
- 100MHz
- Current Rating :
- 600mA
- Polarity/Channel Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 10mA 5V
- Emitter Base Voltage (VEBO) :
- 6V
- Base Part Number :
- 2N5551
- Transistor Application :
- AMPLIFIER
- Published :
- 2007
- JESD-609 Code :
- e3
- Packaging :
- Bulk
- Terminal Position :
- BOTTOM
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Transistor Type :
- NPN
- Weight :
- 179mg
- Contact Plating :
- Tin
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 160V
- Height :
- 5.33mm
- Power Dissipation :
- 625mW
- Max Power Dissipation :
- 625mW
- Width :
- 4.19mm
- Frequency :
- 300MHz
- Pbfree Code :
- yes
- Mounting Type :
- Through Hole
- hFE Min :
- 80
- Number of Pins :
- 3
- Gain Bandwidth Product :
- 300MHz
- Max Collector Current :
- 600mA
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 180V
- Mount :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 160V
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 5mA, 50mA
- Length :
- 5.2mm
- Factory Lead Time :
- 7 Weeks
- Voltage - Rated DC :
- 160V
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- 2N5551BU
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
2N5551BU Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 80 @ 10mA 5V DC current gain.As it features a collector emitter saturation voltage of 200mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 100MHz in the part.When collector current reaches its maximum, it can reach 600mA volts.
2N5551BU Features
the DC current gain for this device is 80 @ 10mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 100MHz
2N5551BU Applications
There are a lot of ON Semiconductor
2N5551BU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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