2N5551-AP
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- Mfr.Part #
- 2N5551-AP
- Manufacturer
- Micro Commercial Components (MCC)
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Datasheet
- Download
- Description
- TRANS NPN 160V 0.6A TO92
- Stock
- 36,997
- In Stock ：
- 36,997
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- Manufacturer :
- Micro Commercial Components (MCC)
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN
- Transistor Element Material :
- SILICON
- Surface Mount :
- No
- Current - Collector (Ic) (Max) :
- 600mA
- Transition Frequency :
- 100MHz
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Voltage - Collector Emitter Breakdown (Max) :
- 160V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power - Max :
- 625mW
- Mounting Type :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 5mA, 50mA
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Position :
- BOTTOM
- Transistor Application :
- AMPLIFIER
- RoHS Status :
- ROHS3 Compliant
- Configuration :
- Single
- Pbfree Code :
- yes
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Terminal Finish :
- Matte Tin (Sn)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 10mA 5V
- Polarity/Channel Type :
- NPN
- Factory Lead Time :
- 8 Weeks
- JESD-30 Code :
- O-PBCY-T3
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Frequency - Transition :
- 300MHz
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Qualification Status :
- Not Qualified
- Datasheets
- 2N5551-AP
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Formed Leads Through Hole
2N5551-AP Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 80 @ 10mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 5mA, 50mA.The part has a transition frequency of 100MHz.Device displays Collector Emitter Breakdown (160V maximal voltage).
2N5551-AP Features
the DC current gain for this device is 80 @ 10mA 5V
the vce saturation(Max) is 500mV @ 5mA, 50mA
a transition frequency of 100MHz
2N5551-AP Applications
There are a lot of Micro Commercial Co
2N5551-AP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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