2N5551
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- Mfr.Part #
- 2N5551
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-92
- Datasheet
- Download
- Description
- TRANS NPN 160V 0.2A TO92
- Stock
- 2,924
- In Stock ：
- 2,924
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- BOTTOM
- Polarity :
- NPN
- Pin Count :
- 3
- Gain Bandwidth Product :
- 300MHz
- Frequency - Transition :
- 300MHz
- JESD-609 Code :
- e0
- Package / Case :
- TO-92
- JESD-30 Code :
- O-PBCY-T3
- Published :
- 2012
- Emitter Base Voltage (VEBO) :
- 6V
- Max Collector Current :
- 600mA
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- ECCN Code :
- EAR99
- Pbfree Code :
- No
- Min Operating Temperature :
- -65°C
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- RoHS Status :
- RoHS Compliant
- Power Dissipation-Max :
- 625mW
- Collector Emitter Voltage (VCEO) :
- 200mV
- Max Operating Temperature :
- 150°C
- Transition Frequency :
- 100MHz
- Collector Base Voltage (VCBO) :
- 180V
- Collector Emitter Saturation Voltage :
- 200mV
- Number of Elements :
- 1
- Continuous Collector Current :
- 600mA
- Number of Terminations :
- 3
- HTS Code :
- 8541.21.00.95
- Mount :
- Through Hole
- Transistor Application :
- AMPLIFIER
- Collector Emitter Breakdown Voltage :
- 160V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Qualification Status :
- Not Qualified
- DC Current Gain-Min (hFE) :
- 80
- hFE Min :
- 80
- Packaging :
- Bulk
- Factory Lead Time :
- 8 Weeks
- Datasheets
- 2N5551
1 Elements 3 Terminations TO-92 Bulk
2N5551 Overview
Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 200mV.Single BJT transistor is recommended to keep the continuous collector voltage at 600mA in order to achieve high efficiency.The emitter base voltage can be kept at 6V for high efficiency.The part has a transition frequency of 100MHz.Single BJT transistor is possible to have a collector current as low as 600mA volts at Single BJT transistors maximum.
2N5551 Features
a collector emitter saturation voltage of 200mV
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
2N5551 Applications
There are a lot of Central Semiconductor
2N5551 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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