2N5550TF
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- Mfr.Part #
- 2N5550TF
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 140V 0.6A TO92-3
- Stock
- 424
- In Stock ：
- 424
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- hFE Min :
- 60
- Collector Emitter Saturation Voltage :
- 250mV
- Radiation Hardening :
- No
- Base Part Number :
- 2N5550
- JESD-609 Code :
- e3
- Weight :
- 240mg
- Terminal Finish :
- Tin (Sn)
- Operating Temperature :
- 150°C TJ
- Factory Lead Time :
- 6 Weeks
- Width :
- 3.86mm
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Emitter Base Voltage (VEBO) :
- 6V
- Transistor Application :
- AMPLIFIER
- Transistor Type :
- NPN
- Max Breakdown Voltage :
- 140V
- Power Dissipation :
- 625mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 5mA, 50mA
- Pbfree Code :
- yes
- Terminal Position :
- BOTTOM
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Through Hole
- Polarity/Channel Type :
- NPN
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 10mA 5V
- Length :
- 4.58mm
- Collector Emitter Breakdown Voltage :
- 140V
- Transistor Element Material :
- SILICON
- Published :
- 2000
- Lifecycle Status :
- ACTIVE (Last Updated: 21 hours ago)
- Transition Frequency :
- 100MHz
- Max Power Dissipation :
- 625mW
- Height :
- 4.58mm
- Max Collector Current :
- 600mA
- Collector Emitter Voltage (VCEO) :
- 140V
- Voltage - Rated DC :
- 140V
- Packaging :
- Tape and Reel (TR)
- Current Rating :
- 600mA
- Collector Base Voltage (VCBO) :
- 160V
- Frequency :
- 300MHz
- Gain Bandwidth Product :
- 300MHz
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- Datasheets
- 2N5550TF
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
2N5550TFR Overview
This device has a DC current gain of 60 @ 10mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 250mV.A VCE saturation (Max) of 250mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 600mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 140V volts can be used.A maximum collector current of 600mA volts is possible.
2N5550TFR Features
the DC current gain for this device is 60 @ 10mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 100MHz
2N5550TFR Applications
There are a lot of ON Semiconductor
2N5550TFR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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