2N5550TF
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- Mfr.Part #
- 2N5550TF
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 140V 0.6A TO92-3
- Stock
- 424
- In Stock ：
- 424
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Weight :
- 240mg
- Terminal Finish :
- Tin (Sn)
- Lead Free :
- Lead Free
- Base Part Number :
- 2N5550
- Max Power Dissipation :
- 625mW
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e3
- Operating Temperature :
- 150°C TJ
- Height :
- 4.58mm
- Lifecycle Status :
- ACTIVE (Last Updated: 21 hours ago)
- Voltage - Rated DC :
- 140V
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 10mA 5V
- Transistor Application :
- AMPLIFIER
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Element Configuration :
- Single
- Width :
- 3.86mm
- Collector Base Voltage (VCBO) :
- 160V
- Mount :
- Through Hole
- Transition Frequency :
- 100MHz
- Mounting Type :
- Through Hole
- Published :
- 2000
- Polarity/Channel Type :
- NPN
- Current Rating :
- 600mA
- Transistor Type :
- NPN
- hFE Min :
- 60
- Terminal Position :
- BOTTOM
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Gain Bandwidth Product :
- 300MHz
- Collector Emitter Saturation Voltage :
- 250mV
- Length :
- 4.58mm
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 6V
- Factory Lead Time :
- 6 Weeks
- Max Breakdown Voltage :
- 140V
- Collector Emitter Breakdown Voltage :
- 140V
- Power Dissipation :
- 625mW
- Collector Emitter Voltage (VCEO) :
- 140V
- Max Collector Current :
- 600mA
- Frequency :
- 300MHz
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 5mA, 50mA
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- 2N5550TF
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
2N5550TFR Overview
This device has a DC current gain of 60 @ 10mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 250mV.A VCE saturation (Max) of 250mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 600mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 140V volts can be used.A maximum collector current of 600mA volts is possible.
2N5550TFR Features
the DC current gain for this device is 60 @ 10mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 100MHz
2N5550TFR Applications
There are a lot of ON Semiconductor
2N5550TFR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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