2N5550TA
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- Mfr.Part #
- 2N5550TA
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 140V 0.6A TO92-3
- Stock
- 1,925
- In Stock ：
- 1,925
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current Rating :
- 600mA
- Polarity/Channel Type :
- NPN
- hFE Min :
- 60
- Collector Emitter Saturation Voltage :
- 250mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 140V
- Published :
- 2007
- Packaging :
- Tape and Box (TB)
- Base Part Number :
- 2N5550
- Number of Pins :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 5mA, 50mA
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Power Dissipation :
- 625mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 10mA 5V
- Element Configuration :
- Single
- Voltage - Rated DC :
- 140V
- Factory Lead Time :
- 2 Weeks
- Frequency :
- 300MHz
- Pbfree Code :
- yes
- Max Collector Current :
- 600mA
- Collector Base Voltage (VCBO) :
- 160V
- Emitter Base Voltage (VEBO) :
- 6V
- Power Dissipation :
- 625mW
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- ACTIVE (Last Updated: 16 hours ago)
- Max Breakdown Voltage :
- 140V
- Contact Plating :
- Tin
- Transition Frequency :
- 100MHz
- Terminal Position :
- BOTTOM
- Gain Bandwidth Product :
- 300MHz
- Weight :
- 240mg
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Mount :
- Through Hole
- Operating Temperature :
- 150°C TJ
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Collector Emitter Breakdown Voltage :
- 140V
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Mounting Type :
- Through Hole
- Transistor Application :
- AMPLIFIER
- Radiation Hardening :
- No
- Transistor Type :
- NPN
- Datasheets
- 2N5550TA
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
2N5550TAR Overview
DC current gain in this device equals 60 @ 10mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 250mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 250mV @ 5mA, 50mA.An emitter's base voltage can be kept at 6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 600mA current rating.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 140V volts.In extreme cases, the collector current can be as low as 600mA volts.
2N5550TAR Features
the DC current gain for this device is 60 @ 10mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 100MHz
2N5550TAR Applications
There are a lot of ON Semiconductor
2N5550TAR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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