2N5550RLRP

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Mfr.Part #
2N5550RLRP
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Datasheet
Download
Description
TRANS NPN 140V 0.6A TO92
Stock
27,869
In Stock :
27,869

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Mounting Type :
Through Hole
Pbfree Code :
yes
Qualification Status :
COMMERCIAL
RoHS Status :
ROHS3 Compliant
Pin Count :
3
Frequency - Transition :
300MHz
Transition Frequency :
100MHz
Package / Case :
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Configuration :
Single
Peak Reflow Temperature (Cel) :
260
DC Current Gain (hFE) (Min) @ Ic, Vce :
60 @ 10mA 5V
Transistor Element Material :
SILICON
Transistor Type :
NPN
Transistor Application :
AMPLIFIER
Surface Mount :
No
Polarity/Channel Type :
NPN
Reach Compliance Code :
Unknown
Number of Terminations :
3
Current - Collector (Ic) (Max) :
600mA
Vce Saturation (Max) @ Ib, Ic :
250mV @ 5mA, 50mA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Voltage - Collector Emitter Breakdown (Max) :
140V
Operating Temperature :
-55°C~150°C TJ
Number of Elements :
1
JESD-609 Code :
e1
Terminal Finish :
TIN SILVER COPPER
Current - Collector Cutoff (Max) :
100nA ICBO
Terminal Position :
BOTTOM
Packaging :
Tape and Box (TB)
JESD-30 Code :
O-PBCY-T3
Power - Max :
625mW
Time@Peak Reflow Temperature-Max (s) :
40
Datasheets
2N5550RLRP
Introducing Transistors - Bipolar (BJT) - Single onsemi 2N5550RLRP from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads), Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, 2N5550RLRP pinout, 2N5550RLRP datasheet PDF, 2N5550RLRP amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2N5550RLRP ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2N5550RLRP


NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole

2N5550RLRPG Overview


DC current gain in this device equals 60 @ 10mA 5V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 250mV @ 5mA, 50mA.As a result, the part has a transition frequency of 100MHz.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.

2N5550RLRPG Features


the DC current gain for this device is 60 @ 10mA 5V
the vce saturation(Max) is 250mV @ 5mA, 50mA
a transition frequency of 100MHz


2N5550RLRPG Applications


There are a lot of Rochester Electronics, LLC
2N5550RLRPG applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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