2N5550RLRP
- Mfr.Part #
- 2N5550RLRP
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 140V 0.6A TO92
- Stock
- 27,869
- In Stock :
- 27,869
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Pbfree Code :
- yes
- Qualification Status :
- COMMERCIAL
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- Frequency - Transition :
- 300MHz
- Transition Frequency :
- 100MHz
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- 260
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 10mA 5V
- Transistor Element Material :
- SILICON
- Transistor Type :
- NPN
- Transistor Application :
- AMPLIFIER
- Surface Mount :
- No
- Polarity/Channel Type :
- NPN
- Reach Compliance Code :
- Unknown
- Number of Terminations :
- 3
- Current - Collector (Ic) (Max) :
- 600mA
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 5mA, 50mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Collector Emitter Breakdown (Max) :
- 140V
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- JESD-609 Code :
- e1
- Terminal Finish :
- TIN SILVER COPPER
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Terminal Position :
- BOTTOM
- Packaging :
- Tape and Box (TB)
- JESD-30 Code :
- O-PBCY-T3
- Power - Max :
- 625mW
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Datasheets
- 2N5550RLRP

NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
2N5550RLRPG Overview
DC current gain in this device equals 60 @ 10mA 5V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 250mV @ 5mA, 50mA.As a result, the part has a transition frequency of 100MHz.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
2N5550RLRPG Features
the DC current gain for this device is 60 @ 10mA 5V
the vce saturation(Max) is 250mV @ 5mA, 50mA
a transition frequency of 100MHz
2N5550RLRPG Applications
There are a lot of Rochester Electronics, LLC
2N5550RLRPG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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