2N5550

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Mfr.Part #
2N5550
Manufacturer
NTE Electronics, Inc.
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
TRANS NPN 140V 0.6A TO92
Stock
149
In Stock :
149

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Manufacturer :
NTE Electronics, Inc.
Product Category :
Transistors - Bipolar (BJT) - Single
Power - Max :
625mW
Operating Temperature :
-55°C~150°C TJ
Voltage - Collector Emitter Breakdown (Max) :
140V
Transition Frequency :
100MHz
Pbfree Code :
yes
Transistor Type :
NPN
Vce Saturation (Max) @ Ib, Ic :
250mV @ 5mA, 50mA
Number of Elements :
1
Current - Collector (Ic) (Max) :
600mA
Frequency - Transition :
300MHz
Pin Count :
3
Terminal Finish :
TIN SILVER COPPER
Terminal Position :
BOTTOM
Transistor Element Material :
SILICON
Packaging :
Bulk
Mounting Type :
Through Hole
RoHS Status :
Non-RoHS Compliant
JESD-30 Code :
O-PBCY-T3
Configuration :
Single
Polarity/Channel Type :
NPN
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Surface Mount :
No
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Application :
AMPLIFIER
JESD-609 Code :
e1
Number of Terminations :
3
Peak Reflow Temperature (Cel) :
260
DC Current Gain (hFE) (Min) @ Ic, Vce :
60 @ 10mA 5V
Time@Peak Reflow Temperature-Max (s) :
40
Qualification Status :
COMMERCIAL
Current - Collector Cutoff (Max) :
100nA ICBO
Datasheets
2N5550
Introducing Transistors - Bipolar (BJT) - Single NTE Electronics, Inc. 2N5550 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Package / Case:TO-226-3, TO-92-3 (TO-226AA), Number of Terminations:3, 2N5550 pinout, 2N5550 datasheet PDF, 2N5550 amp .Beyond Transistors - Bipolar (BJT) - Single NTE Electronics, Inc. 2N5550 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

NTE Electronics, Inc. 2N5550


NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole

2N5550 Overview


This device has a DC current gain of 60 @ 10mA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 250mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).As you can see, the part has a transition frequency of 100MHz.Collector Emitter Breakdown occurs at 140VV - Maximum voltage.

2N5550 Features


the DC current gain for this device is 60 @ 10mA 5V
the vce saturation(Max) is 250mV @ 5mA, 50mA
a transition frequency of 100MHz


2N5550 Applications


There are a lot of Rochester Electronics, LLC
2N5550 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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