2N5457

Manufacturer :

Central Semiconductor

Product Category :

Transistors - JFETs

Pbfree Code :

No

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Terminal Finish :

Tin/Lead (Sn/Pb)

Reach Compliance Code :

not_compliant

ECCN Code :

EAR99

Element Configuration :

Single

Continuous Drain Current (ID) :

10mA

Current - Drain (Idss) @ Vds (Vgs=0) :

1mA @ 15V

Power Dissipation :

310mW

Published :

2001

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Mount :

Through Hole

Voltage - Cutoff (VGS off) @ Id :

500mV @ 10nA

Feedback Cap-Max (Crss) :

3 pF

Transistor Element Material :

SILICON

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Gate to Source Voltage (Vgs) :

25V

Factory Lead Time :

8 Weeks

Transistor Application :

SWITCHING

Operating Temperature :

-65°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

7pF @ 15V

Number of Terminations :

3

JESD-609 Code :

e0

FET Type :

N-Channel

Mounting Type :

Through Hole

Additional Feature :

LOW NOISE

JESD-30 Code :

O-PBCY-W3

Packaging :

Bulk

RoHS Status :

Non-RoHS Compliant

Terminal Position :

BOTTOM

Drain to Source Breakdown Voltage :

25V

Terminal Form :

Wire

FET Technology :

JUNCTION

HTS Code :

8541.21.00.95

Max Power Dissipation :

310mW

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

Depletion Mode