2N5457

Manufacturer :

Central Semiconductor

Product Category :

Transistors - JFETs

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Finish :

Tin/Lead (Sn/Pb)

Number of Terminations :

3

Operating Temperature :

-65°C~150°C TJ

Continuous Drain Current (ID) :

10mA

Transistor Element Material :

SILICON

Max Power Dissipation :

310mW

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

25V

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Factory Lead Time :

8 Weeks

Drain to Source Breakdown Voltage :

25V

Terminal Form :

Wire

FET Technology :

JUNCTION

FET Type :

N-Channel

Reach Compliance Code :

not_compliant

Input Capacitance (Ciss) (Max) @ Vds :

7pF @ 15V

Terminal Position :

BOTTOM

Operating Mode :

Depletion Mode

JESD-609 Code :

e0

Qualification Status :

Not Qualified

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Voltage - Cutoff (VGS off) @ Id :

500mV @ 10nA

HTS Code :

8541.21.00.95

Current - Drain (Idss) @ Vds (Vgs=0) :

1mA @ 15V

Mount :

Through Hole

Feedback Cap-Max (Crss) :

3 pF

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Packaging :

Bulk

ECCN Code :

EAR99

Additional Feature :

LOW NOISE

Power Dissipation :

310mW

RoHS Status :

Non-RoHS Compliant

JESD-30 Code :

O-PBCY-W3

Pbfree Code :

No

Element Configuration :

Single

Published :

2001