2N5408

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - Single

Technology :

Si

Manufacturer :

Microchip

Voltage - Collector Emitter Breakdown (Max) :

80 V

Terminal Form :

Solder Lug

DC Current Gain-Min (hFE) :

20

Transistor Polarity :

PNP

Number of Elements :

1

Current - Collector Cutoff (Max) :

-

Current - Collector (Ic) (Max) :

5 A

Surface Mount :

No

Power - Max :

52 W

Collector-Emitter Voltage-Max :

80 V

Package Shape :

Round

Mounting Type :

Stud Mount

Series :

-

JEDEC-95 Code :

TO-111

Number of Terminals :

4

Reach Compliance Code :

Compliant

Transistor Element Material :

SILICON

Brand :

Microchip Technology

Vce Saturation (Max) @ Ib, Ic :

-

Subcategory :

Transistors

Case Connection :

Isolated

DC Current Gain (hFE) (Min) @ Ic, Vce :

-

Package / Case :

TO-111-4, Stud

Package :

Bulk

JESD-30 Code :

O-MUPM-D4

Product Status :

Active

Polarity/Channel Type :

PNP

Configuration :

Single

Collector Current-Max (IC) :

5 A

Transistor Type :

PNP

VCEsat-Max :

0.6 V

Power Dissipation-Max (Abs) :

30 W

Qualification Status :

Not Qualified

Product Category :

Bipolar Transistors - BJT

Supplier Device Package :

TO-111

ECCN Code :

EAR99

Product Type :

BJTs - Bipolar Transistors

Frequency - Transition :

-

Operating Temperature :

-65°C ~ 200°C (TJ)

Terminal Position :

UPPER