2N5401TAR

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Breakdown Voltage :

150V

Mounting Type :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Min Operating Temperature :

-55°C

Collector Base Voltage (VCBO) :

-160V

Frequency - Transition :

400MHz

Transistor Type :

PNP

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Voltage - Rated DC :

-160V

Supplier Device Package :

TO-92-3

Number of Elements :

1

Gain Bandwidth Product :

300MHz

Element Configuration :

Single

Current - Collector Cutoff (Max) :

50nA ICBO

Power - Max :

625mW

Number of Pins :

3

Mount :

Through Hole

Max Power Dissipation :

625mW

Base Part Number :

2N5401

Vce Saturation (Max) @ Ib, Ic :

500mV @ 5mA, 50mA

Current Rating :

-600mA

Max Operating Temperature :

150°C

Weight :

178.2mg

hFE Min :

60

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 10mA 5V

RoHS Status :

RoHS Compliant

Packaging :

Tape and Box (TB)

Current - Collector (Ic) (Max) :

600mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

625mW

Collector Emitter Voltage (VCEO) :

500mV

Voltage - Collector Emitter Breakdown (Max) :

150V

Max Collector Current :

600mA

Emitter Base Voltage (VEBO) :

-5V

Lead Free :

Lead Free

Polarity :

PNP

Frequency :

400MHz