2N5401RL1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Saturation Voltage :

500mV

Number of Terminations :

3

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 10mA 5V

RoHS Status :

RoHS Compliant

Number of Elements :

1

Vce Saturation (Max) @ Ib, Ic :

500mV @ 5mA, 50mA

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Number of Pins :

3

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 4 days ago)

Qualification Status :

Not Qualified

Base Part Number :

2N5401

Terminal Position :

BOTTOM

Transistor Application :

AMPLIFIER

Voltage - Rated DC :

-150V

Time@Peak Reflow Temperature-Max (s) :

40

Transition Frequency :

100MHz

Operating Temperature :

-55°C~150°C TJ

Surface Mount :

No

HTS Code :

8541.21.00.95

Max Power Dissipation :

625mW

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

hFE Min :

50

Published :

2005

Collector Base Voltage (VCBO) :

160V

Transistor Type :

PNP

Peak Reflow Temperature (Cel) :

260

Reach Compliance Code :

Unknown

Element Configuration :

Single

Emitter Base Voltage (VEBO) :

5V

Mounting Type :

Through Hole

Gain Bandwidth Product :

300MHz

Current - Collector (Ic) (Max) :

600mA

Current Rating :

-600mA

Additional Feature :

EUROPEAN PART NUMBER

Collector Emitter Breakdown Voltage :

150V

Collector Emitter Voltage (VCEO) :

500mV

Polarity/Channel Type :

PNP

ECCN Code :

EAR99

Current - Collector Cutoff (Max) :

50nA ICBO

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e1

Max Collector Current :

600mA

Pin Count :

3