2N5329

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Mfr.Part #
2N5329
Manufacturer
Microchip Technology
Package / Case
TO-211MA, TO-210AC, TO-61-4, Stud
Datasheet
Download
Description
POWER BJT
Stock
12,916
In Stock :
12,916

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Manufacturer :
Microchip Technology
Product Category :
Transistors - Bipolar (BJT) - Single
Package :
Bulk
Terminal Position :
UPPER
Vce Saturation (Max) @ Ib, Ic :
1.8V @ 2mA, 10mA
Polarity/Channel Type :
NPN
Technology :
Si
Power Dissipation-Max (Abs) :
65 W
Product Status :
Active
DC Current Gain (hFE) (Min) @ Ic, Vce :
-
Power - Max :
113 W
JESD-30 Code :
O-MUPM-D3
Pbfree Code :
No
Manufacturer :
Solitron Devices Inc
Collector-Emitter Voltage-Max :
90 V
Pin Count :
3
Qualification Status :
Not Qualified
Case Connection :
Isolated
DC Current Gain-Min (hFE) :
40
Transistor Polarity :
NPN
Surface Mount :
No
Power Dissipation Ambient-Max :
65 W
Configuration :
Single
Subcategory :
Other Transistors
Transistor Element Material :
SILICON
Reach Compliance Code :
Unknown
Current - Collector (Ic) (Max) :
20 A
VCEsat-Max :
1.8 V
Collector Current-Max (IC) :
20 A
Series :
-
Number of Terminals :
3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Transistor Type :
PNP
Mounting Type :
Stud Mount
Transistor Application :
SWITCHING
Operating Temperature :
-65°C ~ 200°C (TJ)
Number of Elements :
1
Current - Collector Cutoff (Max) :
-
ECCN Code :
EAR99
Voltage - Collector Emitter Breakdown (Max) :
90 V
Package / Case :
TO-211MA, TO-210AC, TO-61-4, Stud
Package Shape :
Round
Frequency - Transition :
-
Terminal Form :
Solder Lug
Supplier Device Package :
TO-61
Datasheets
2N5329
Introducing Transistors - Bipolar (BJT) - Single Microchip Technology 2N5329 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Stud Mount, Operating Temperature:-65°C ~ 200°C (TJ), Package / Case:TO-211MA, TO-210AC, TO-61-4, Stud, 2N5329 pinout, 2N5329 datasheet PDF, 2N5329 amp .Beyond Transistors - Bipolar (BJT) - Single Microchip Technology 2N5329 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



PNP -65°C ~ 200°C (TJ) - 1 Elements SILICON NPN TO-211MA, TO-210AC, TO-61-4, Stud Stud Mount

2N5329 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is -.When VCE saturation is 1.8V @ 2mA, 10mA, transistor means Ic has reached transistors maximum value (saturated).Supplier package TO-61 contains the product.Voltage maximal between collector and emitter is set to 90 V.The device has a 90 V maximal voltage - Collector Emitter Breakdown.

2N5329 Features


the DC current gain for this device is -
the vce saturation(Max) is 1.8V @ 2mA, 10mA
the supplier device package of TO-61


2N5329 Applications


There are a lot of Microchip Technology
2N5329 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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