2N4999

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Mfr.Part #
2N4999
Manufacturer
Microchip Technology
Package / Case
TO-210AA, TO-59-4, Stud
Datasheet
Download
Description
POWER BJT
Stock
47,474
In Stock :
47,474

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Manufacturer :
Microchip Technology
Product Category :
Transistors - Bipolar (BJT) - Single
Product Type :
BJTs - Bipolar Transistors
Package / Case :
TO-210AA, TO-59-4, Stud
DC Current Gain (hFE) (Min) @ Ic, Vce :
-
Brand :
Microchip Technology
Manufacturer :
Microchip
Package :
Bulk
Product Category :
Bipolar Transistors - BJT
Surface Mount :
No
Current - Collector Cutoff (Max) :
-
Transistor Element Material :
SILICON
Terminal Position :
UPPER
Mounting Type :
Stud Mount
Terminal Form :
Solder Lug
JEDEC-95 Code :
TO-59
Supplier Device Package :
TO-59
JESD-30 Code :
O-MUPM-D3
Qualification Status :
Not Qualified
Package Shape :
Round
Configuration :
Single
Subcategory :
Transistors
Technology :
Si
Current - Collector (Ic) (Max) :
2 A
Voltage - Collector Emitter Breakdown (Max) :
80 V
Product Status :
Active
Frequency - Transition :
-
Number of Elements :
1
DC Current Gain-Min (hFE) :
30
ECCN Code :
EAR99
Operating Temperature :
-
Collector Current-Max (IC) :
2 A
Polarity/Channel Type :
PNP
Power - Max :
35 W
Transistor Polarity :
PNP
Collector-Emitter Voltage-Max :
80 V
Number of Terminals :
3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Reach Compliance Code :
Compliant
Transistor Type :
PNP
Vce Saturation (Max) @ Ib, Ic :
-
Series :
-
Datasheets
2N4999
Introducing Transistors - Bipolar (BJT) - Single Microchip Technology 2N4999 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-210AA, TO-59-4, Stud, Mounting Type:Stud Mount, Operating Temperature:-, 2N4999 pinout, 2N4999 datasheet PDF, 2N4999 amp .Beyond Transistors - Bipolar (BJT) - Single Microchip Technology 2N4999 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



PNP - - 1 Elements SILICON PNP TO-210AA, TO-59-4, Stud Stud Mount

2N4999 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is -.When VCE saturation is -, transistor means Ic has reached transistors maximum value (saturated).Supplier package TO-59 contains the product.Voltage maximal between collector and emitter is set to 80 V.The device has a 80 V maximal voltage - Collector Emitter Breakdown.

2N4999 Features


the DC current gain for this device is -
the vce saturation(Max) is -
the supplier device package of TO-59


2N4999 Applications


There are a lot of Microchip Technology
2N4999 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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