2N4403TA
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- Mfr.Part #
- 2N4403TA
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- SMALL SIGNAL BIPOLAR TRANSISTOR,
- Stock
- 1,017
- In Stock ：
- 1,017
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Arrays
- Published :
- 2007
- Radiation Hardening :
- No
- Power Dissipation :
- 625mW
- Pbfree Code :
- yes
- Gain Bandwidth Product :
- 200MHz
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- -5V
- Transistor Type :
- PNP
- Length :
- 5.2mm
- Number of Terminations :
- 3
- Transition Frequency :
- 200MHz
- Max Power Dissipation :
- 625mW
- Polarity/Channel Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- -600mA
- Height :
- 5.33mm
- Width :
- 4.19mm
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- hFE Min :
- 100
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 2V
- Max Collector Current :
- 600mA
- Packaging :
- Tape and Box (TB)
- Turn Off Time-Max (toff) :
- 255ns
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 50mA, 500mA
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 40V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Collector Emitter Breakdown Voltage :
- 40V
- Weight :
- 240mg
- Lead Free :
- Lead Free
- Frequency :
- 200MHz
- Collector Base Voltage (VCBO) :
- -40V
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Mount :
- Through Hole
- Max Breakdown Voltage :
- 40V
- Collector Emitter Saturation Voltage :
- 750mV
- Base Part Number :
- 2N4403
- Voltage - Rated DC :
- -40V
- Factory Lead Time :
- 6 Weeks
- Terminal Finish :
- Tin (Sn)
- Terminal Position :
- BOTTOM
- Datasheets
- 2N4403TA
PNP -55°C~150°C TJ 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
2N4403TAR Overview
In this device, the DC current gain is 100 @ 150mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 750mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 750mV @ 50mA, 500mA.Keeping the emitter base voltage at -5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-600mA).200MHz is present in the transition frequency.An input voltage of 40V volts is the breakdown voltage.Maximum collector currents can be below 600mA volts.
2N4403TAR Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -600mA
a transition frequency of 200MHz
2N4403TAR Applications
There are a lot of ON Semiconductor
2N4403TAR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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