2N4401RLRMG
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- Mfr.Part #
- 2N4401RLRMG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.6A TO92
- Stock
- 19,450
- In Stock ：
- 19,450
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Transition Frequency :
- 250MHz
- Transistor Application :
- SWITCHING
- Emitter Base Voltage (VEBO) :
- 6V
- Base Part Number :
- 2N4401
- HTS Code :
- 8541.21.00.75
- Reach Compliance Code :
- Unknown
- Polarity/Channel Type :
- NPN
- Current Rating :
- 600mA
- Peak Reflow Temperature (Cel) :
- 260
- Max Collector Current :
- 600mA
- Max Power Dissipation :
- 625mW
- Gain Bandwidth Product :
- 250MHz
- Number of Elements :
- 1
- Voltage - Rated DC :
- 40V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Number of Pins :
- 3
- Terminal Position :
- BOTTOM
- Collector Emitter Voltage (VCEO) :
- 750mV
- Transistor Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 40V
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Surface Mount :
- No
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 60V
- Number of Terminations :
- 3
- Turn Off Time-Max (toff) :
- 255ns
- JESD-609 Code :
- e1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 1V
- Mounting Type :
- Through Hole
- hFE Min :
- 20
- Packaging :
- Tape and Box (TB)
- RoHS Status :
- RoHS Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 50mA, 500mA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- 750mV
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Qualification Status :
- Not Qualified
- Published :
- 2007
- Datasheets
- 2N4401RLRMG
NPN -55°C~150°C TJ 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
2N4401RLRMG Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 750mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 750mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 600mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 250MHz.During maximum operation, collector current can be as low as 600mA volts.
2N4401RLRMG Features
the DC current gain for this device is 100 @ 150mA 1V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 250MHz
2N4401RLRMG Applications
There are a lot of ON Semiconductor
2N4401RLRMG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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