2N4261UB

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - Single

Vce Saturation (Max) @ Ib, Ic :

350mV @ 1mA, 10mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 10mA 1V

Lifecycle Status :

IN PRODUCTION (Last Updated: 2 weeks ago)

Max Power Dissipation :

200mW

Operating Temperature :

-65°C~200°C TJ

Polarity/Channel Type :

PNP

Published :

2007

JESD-30 Code :

R-CDSO-N4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

Non-RoHS Compliant

ECCN Code :

EAR99

Max Collector Current :

30mA

Number of Terminations :

4

Transistor Type :

PNP

Number of Elements :

1

Radiation Hardening :

No

Pin Count :

3

Collector Base Voltage (VCBO) :

15V

Configuration :

Single

HTS Code :

8541.21.00.95

Number of Pins :

3

Factory Lead Time :

12 Weeks

Collector Emitter Voltage (VCEO) :

15V

Package / Case :

3-SMD, No Lead

Turn On Time-Max (ton) :

2.5ns

Packaging :

Bulk

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Current - Collector Cutoff (Max) :

10μA ICBO

Terminal Position :

Dual

Power - Max :

200mW

Mount :

Surface Mount