2N3906TF
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- Mfr.Part #
- 2N3906TF
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.2A TO92-3
- Stock
- 1,918
- In Stock ：
- 1,918
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- yes
- REACH SVHC :
- No SVHC
- Terminal Finish :
- Tin (Sn)
- Emitter Base Voltage (VEBO) :
- -5V
- Factory Lead Time :
- 7 Weeks
- Collector Emitter Breakdown Voltage :
- -40V
- Voltage - Rated DC :
- -40V
- Power Dissipation :
- 625mW
- Transistor Application :
- SWITCHING
- Turn On Time-Max (ton) :
- 70ns
- Max Power Dissipation :
- 625mW
- Gain Bandwidth Product :
- 250MHz
- Width :
- 4.19mm
- Base Part Number :
- 2N3906
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Element Configuration :
- Single
- Weight :
- 240mg
- Polarity/Channel Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Published :
- 2007
- JESD-609 Code :
- e3
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Number of Terminations :
- 3
- Frequency :
- 250MHz
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Transition Frequency :
- 250MHz
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C~150°C TJ
- Height :
- 5.33mm
- Current Rating :
- -200mA
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- -40V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 5.2mm
- Terminal Position :
- BOTTOM
- Collector Emitter Saturation Voltage :
- -250mV
- Mount :
- Through Hole
- Max Collector Current :
- 200mA
- Max Breakdown Voltage :
- 160V
- Packaging :
- Tape and Reel (TR)
- hFE Min :
- 100
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 40V
- Transistor Type :
- PNP
- Datasheets
- 2N3906TF
PNP -55°C~150°C TJ 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
2N3906TF Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 10mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -250mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 5mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Its current rating is -200mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 250MHz.Single BJT transistor can take a breakdown input voltage of 160V volts.During maximum operation, collector current can be as low as 200mA volts.
2N3906TF Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
the current rating of this device is -200mA
a transition frequency of 250MHz
2N3906TF Applications
There are a lot of ON Semiconductor
2N3906TF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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