2N3906T93
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- Mfr.Part #
- 2N3906T93
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.2A TO92
- Stock
- 3,734
- In Stock ：
- 3,734
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Qualification Status :
- Not Qualified
- Peak Reflow Temperature (Cel) :
- 260
- Transition Frequency :
- 250MHz
- Collector-Base Capacitance-Max :
- 4.5pF
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 50nA
- Max Collector Current :
- 200mA
- Transistor Type :
- PNP
- Current - Collector (Ic) (Max) :
- 200mA
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 400mV
- Pin Count :
- 3
- JESD-609 Code :
- e3/e2
- Turn On Time-Max (ton) :
- 70ns
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Operating Temperature :
- 150°C TJ
- Base Part Number :
- 2N3906
- Polarity/Channel Type :
- PNP
- Mount :
- Through Hole
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 40V
- Emitter Base Voltage (VEBO) :
- 5V
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Transistor Element Material :
- SILICON
- HTS Code :
- 8541.21.00.75
- Max Power Dissipation :
- 625mW
- Voltage - Rated DC :
- -40V
- Gain Bandwidth Product :
- 250MHz
- VCEsat-Max :
- 0.4 V
- Transistor Application :
- SWITCHING
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Turn Off Time-Max (toff) :
- 300ns
- JESD-30 Code :
- O-PBCY-T3
- Terminal Position :
- BOTTOM
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Current Rating :
- -200mA
- Mounting Type :
- Through Hole
- hFE Min :
- 60
- Published :
- 1998
- Terminal Finish :
- TIN/TIN COPPER
- Packaging :
- Tape and Box (TB)
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 40V
- Datasheets
- 2N3906T93
PNP 150°C TJ 50nA 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
2N3906T93 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 10mA 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 5mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -200mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 250MHz.During maximum operation, collector current can be as low as 200mA volts.
2N3906T93 Features
the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is -200mA
a transition frequency of 250MHz
2N3906T93 Applications
There are a lot of ROHM Semiconductor
2N3906T93 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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