2N3906BU
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- Mfr.Part #
- 2N3906BU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.2A TO92-3
- Stock
- 3,246
- In Stock ：
- 3,246
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 200mA
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Gain Bandwidth Product :
- 250MHz
- Collector Base Voltage (VCBO) :
- -40V
- Mount :
- Through Hole
- Frequency :
- 250MHz
- Collector Emitter Saturation Voltage :
- -400mV
- Number of Terminations :
- 3
- Transistor Type :
- PNP
- JESD-609 Code :
- e3
- Terminal Finish :
- Tin (Sn)
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 40V
- Voltage - Rated DC :
- -40V
- Max Power Dissipation :
- 625mW
- Base Part Number :
- 2N3906
- Weight :
- 179mg
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- Length :
- 5.2mm
- Transistor Element Material :
- SILICON
- Turn On Time-Max (ton) :
- 70ns
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 40V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Height :
- 5.33mm
- Polarity/Channel Type :
- PNP
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Lead Free :
- Lead Free
- Current Rating :
- -200mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Width :
- 4.19mm
- Published :
- 2007
- REACH SVHC :
- No SVHC
- Terminal Position :
- BOTTOM
- Emitter Base Voltage (VEBO) :
- -5V
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Transition Frequency :
- 250MHz
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Power Dissipation :
- 625mW
- hFE Min :
- 100
- Factory Lead Time :
- 6 Weeks
- Packaging :
- Bulk
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Datasheets
- 2N3906BU
PNP -55°C~150°C TJ 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
2N3906BU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 10mA 1V.With a collector emitter saturation voltage of -400mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 5mA, 50mA.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -200mA.A transition frequency of 250MHz is present in the part.Collector current can be as low as 200mA volts at its maximum.
2N3906BU Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
the current rating of this device is -200mA
a transition frequency of 250MHz
2N3906BU Applications
There are a lot of ON Semiconductor
2N3906BU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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