2N3906BU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Base Part Number :

2N3906

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Collector Emitter Breakdown Voltage :

40V

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 50mA

Polarity/Channel Type :

PNP

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Terminal Finish :

Tin (Sn)

ECCN Code :

EAR99

Current Rating :

-200mA

Number of Terminations :

3

Published :

2007

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Transistor Element Material :

SILICON

Pbfree Code :

yes

Weight :

179mg

Max Power Dissipation :

625mW

Lead Free :

Lead Free

Power Dissipation :

625mW

Packaging :

Bulk

Transistor Type :

PNP

Turn On Time-Max (ton) :

70ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Emitter Base Voltage (VEBO) :

-5V

Max Collector Current :

200mA

Collector Emitter Voltage (VCEO) :

40V

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 10mA 1V

Collector Emitter Saturation Voltage :

-400mV

Height :

5.33mm

Voltage - Rated DC :

-40V

Transistor Application :

SWITCHING

hFE Min :

100

JESD-609 Code :

e3

Factory Lead Time :

6 Weeks

Number of Elements :

1

Mounting Type :

Through Hole

Transition Frequency :

250MHz

Frequency :

250MHz

Width :

4.19mm

Number of Pins :

3

Length :

5.2mm

REACH SVHC :

No SVHC

Mount :

Through Hole

Collector Base Voltage (VCBO) :

-40V

Terminal Position :

BOTTOM

Operating Temperature :

-55°C~150°C TJ

Gain Bandwidth Product :

250MHz