2N3904T93
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- Mfr.Part #
- 2N3904T93
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.2A TO92
- Stock
- 9,933
- In Stock ：
- 9,933
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Voltage (VCEO) :
- 40V
- Collector Base Voltage (VCBO) :
- 60V
- Packaging :
- Tape and Box (TB)
- Gain Bandwidth Product :
- 300MHz
- Turn Off Time-Max (toff) :
- 250ns
- Mount :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 40V
- Transistor Type :
- NPN
- hFE Min :
- 40
- Current - Collector Cutoff (Max) :
- 50nA
- Max Collector Current :
- 200mA
- Terminal Finish :
- TIN/TIN COPPER
- HTS Code :
- 8541.21.00.75
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 5mA, 50mA
- Max Power Dissipation :
- 300mW
- Terminal Position :
- BOTTOM
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- 6V
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Current Rating :
- 200mA
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- NPN
- Power - Max :
- 625mW
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Transition Frequency :
- 300MHz
- Mounting Type :
- Through Hole
- Collector-Base Capacitance-Max :
- 4pF
- Turn On Time-Max (ton) :
- 70ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Transistor Application :
- SWITCHING
- Voltage - Rated DC :
- 40V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- ECCN Code :
- EAR99
- Published :
- 2005
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Operating Temperature :
- 150°C TJ
- Base Part Number :
- 2N3904
- Pbfree Code :
- yes
- Datasheets
- 2N3904T93
NPN 150°C TJ 50nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
2N3904T93 Overview
In this device, the DC current gain is 100 @ 10mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 5mA, 50mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (200mA).300MHz is present in the transition frequency.Maximum collector currents can be below 200mA volts.
2N3904T93 Features
the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
a transition frequency of 300MHz
2N3904T93 Applications
There are a lot of ROHM Semiconductor
2N3904T93 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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