2N3637UB

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Mfr.Part #
2N3637UB
Manufacturer
Microchip Technology
Package / Case
3-SMD, No Lead
Datasheet
Download
Description
TRANS PNP 175V 1A UB
Stock
34,103
In Stock :
34,103

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Manufacturer :
Microchip Technology
Product Category :
Transistors - Bipolar (BJT) - Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pin Count :
3
Collector Base Voltage (VCBO) :
175V
ECCN Code :
EAR99
JESD-609 Code :
e0
Operating Temperature :
-65°C~200°C TJ
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 50mA 10V
Radiation Hardening :
No
Configuration :
Single
HTS Code :
8541.29.00.95
Mount :
Surface Mount
Collector Emitter Voltage (VCEO) :
140V
Max Power Dissipation :
1.5W
Number of Elements :
1
Current - Collector Cutoff (Max) :
10μA
Pbfree Code :
No
Max Collector Current :
1A
Lifecycle Status :
IN PRODUCTION (Last Updated: 3 weeks ago)
Mounting Type :
Surface Mount
Polarity/Channel Type :
PNP
Terminal Position :
Dual
Number of Pins :
3
Power - Max :
1.5W
Terminal Finish :
TIN LEAD
Transistor Element Material :
SILICON
Published :
2007
Number of Terminations :
3
Collector Emitter Breakdown Voltage :
175V
Packaging :
Tray
Emitter Base Voltage (VEBO) :
5V
Factory Lead Time :
12 Weeks
Transistor Application :
SWITCHING
Transistor Type :
PNP
RoHS Status :
Non-RoHS Compliant
Package / Case :
3-SMD, No Lead
Power Dissipation :
1W
Vce Saturation (Max) @ Ib, Ic :
600mV @ 5mA, 50mA
Datasheets
2N3637UB
Introducing Transistors - Bipolar (BJT) - Single Microchip Technology 2N3637UB from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-65°C~200°C TJ, Mounting Type:Surface Mount, Number of Pins:3, Number of Terminations:3, Package / Case:3-SMD, No Lead, 2N3637UB pinout, 2N3637UB datasheet PDF, 2N3637UB amp .Beyond Transistors - Bipolar (BJT) - Single Microchip Technology 2N3637UB ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology 2N3637UB


PNP -65°C~200°C TJ 10μA 1 Elements 3 Terminations SILICON PNP 3-SMD, No Lead Tray Surface Mount

2N3637UB Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 50mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.During maximum operation, collector current can be as low as 1A volts.

2N3637UB Features


the DC current gain for this device is 100 @ 50mA 10V
the vce saturation(Max) is 600mV @ 5mA, 50mA
the emitter base voltage is kept at 5V


2N3637UB Applications


There are a lot of Microsemi Corporation
2N3637UB applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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