2N3636UB

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Mfr.Part #
2N3636UB
Manufacturer
Microchip Technology
Package / Case
3-SMD, No Lead
Datasheet
Download
Description
TRANS PNP 175V 1A 3SMD
Stock
49,247
In Stock :
49,247

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Manufacturer :
Microchip Technology
Product Category :
Transistors - Bipolar (BJT) - Single
RoHS Status :
Non-RoHS Compliant
Collector Emitter Voltage (VCEO) :
175V
Packaging :
Bulk
Radiation Hardening :
No
Lifecycle Status :
IN PRODUCTION (Last Updated: 1 month ago)
Collector Base Voltage (VCBO) :
175V
Package / Case :
3-SMD, No Lead
Vce Saturation (Max) @ Ib, Ic :
600mV @ 5mA, 50mA
Number of Terminations :
3
Transistor Element Material :
SILICON
Current - Collector Cutoff (Max) :
10μA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Power Dissipation :
1W
ECCN Code :
EAR99
Published :
2007
Mounting Type :
Surface Mount
Operating Temperature :
-65°C~200°C TJ
Mount :
Surface Mount
Transistor Type :
PNP
Power - Max :
1.5W
Terminal Position :
Dual
Number of Pins :
3
Transistor Application :
SWITCHING
HTS Code :
8541.29.00.95
DC Current Gain (hFE) (Min) @ Ic, Vce :
50 @ 50mA 10V
Pin Count :
3
Configuration :
Single
Max Collector Current :
1A
Polarity/Channel Type :
PNP
Factory Lead Time :
12 Weeks
Number of Elements :
1
Datasheets
2N3636UB
Introducing Transistors - Bipolar (BJT) - Single Microchip Technology 2N3636UB from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:3-SMD, No Lead, Number of Terminations:3, Mounting Type:Surface Mount, Operating Temperature:-65°C~200°C TJ, Number of Pins:3, 2N3636UB pinout, 2N3636UB datasheet PDF, 2N3636UB amp .Beyond Transistors - Bipolar (BJT) - Single Microchip Technology 2N3636UB ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



PNP -65°C~200°C TJ 10μA 1 Elements 3 Terminations SILICON PNP 3-SMD, No Lead Bulk Surface Mount

2N3636UB Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 50mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 50mA.During maximum operation, collector current can be as low as 1A volts.

2N3636UB Features


the DC current gain for this device is 50 @ 50mA 10V
the vce saturation(Max) is 600mV @ 5mA, 50mA


2N3636UB Applications


There are a lot of Microsemi Corporation
2N3636UB applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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