2N2920

Manufacturer :

Central Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Current - Collector Cutoff (Max) :

10μA ICBO

Collector Emitter Voltage (VCEO) :

60V

Operating Temperature :

-65°C~200°C TJ

RoHS Status :

Non-RoHS Compliant

Number of Elements :

2

Max Power Dissipation :

350mW

Package / Case :

6-SMD, No Lead

Published :

2007

Number of Pins :

6

Max Collector Current :

30mA

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

235

Vce Saturation (Max) @ Ib, Ic :

300mV @ 100µA, 1mA

Power Dissipation :

350mW

Transistor Element Material :

SILICON

Emitter Base Voltage (VEBO) :

6V

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 1mA 5V

Factory Lead Time :

12 Weeks

Mounting Type :

Surface Mount

Polarity :

NPN

Time@Peak Reflow Temperature-Max (s) :

20

JESD-609 Code :

e0

ECCN Code :

EAR99

Transistor Type :

2 NPN (Dual)

Number of Terminations :

6

Packaging :

Bulk

Pbfree Code :

No

Mount :

Surface Mount

Collector Base Voltage (VCBO) :

70V

Terminal Finish :

TIN LEAD