2N2920

Manufacturer :

Central Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Max Power Dissipation :

350mW

Operating Temperature :

-65°C~200°C TJ

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 1mA 5V

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

20

Mounting Type :

Surface Mount

Max Collector Current :

30mA

JESD-609 Code :

e0

Radiation Hardening :

No

Transistor Element Material :

SILICON

Pbfree Code :

No

Power Dissipation :

350mW

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

235

RoHS Status :

Non-RoHS Compliant

Packaging :

Bulk

Polarity :

NPN

Transistor Type :

2 NPN (Dual)

Number of Pins :

6

Number of Terminations :

6

Terminal Finish :

TIN LEAD

Number of Elements :

2

Package / Case :

6-SMD, No Lead

Vce Saturation (Max) @ Ib, Ic :

300mV @ 100µA, 1mA

Current - Collector Cutoff (Max) :

10μA ICBO

Published :

2007

Collector Emitter Voltage (VCEO) :

60V

Collector Base Voltage (VCBO) :

70V

Factory Lead Time :

12 Weeks

Emitter Base Voltage (VEBO) :

6V