2N2916

Manufacturer :

Central Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 10μA 5V

Number of Terminations :

6

Transistor Element Material :

SILICON

Voltage - Collector Emitter Breakdown (Max) :

45V

Mounting Type :

Through Hole

Polarity/Channel Type :

NPN

Power - Max :

600mW

Operating Temperature (Max) :

175°C

Number of Elements :

2

Qualification Status :

Not Qualified

Published :

2017

Packaging :

Bulk

JESD-30 Code :

O-MBCY-W6

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pbfree Code :

No

Terminal Position :

BOTTOM

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e0

Frequency - Transition :

60MHz

Additional Feature :

LOW NOISE

Terminal Form :

Wire

RoHS Status :

Non-RoHS Compliant

Transition Frequency :

60MHz

Terminal Finish :

Tin/Lead (Sn/Pb)

Configuration :

SEPARATE, 2 ELEMENTS

Power Dissipation-Max (Abs) :

0.3W

Transistor Type :

2 NPN (Dual)

Surface Mount :

No

Package / Case :

TO-78-6 Metal Can

HTS Code :

8541.21.00.95

Reach Compliance Code :

not_compliant

Current - Collector (Ic) (Max) :

30mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)