2N2913

Manufacturer :

Solid State Inc.

Product Category :

Transistors - Bipolar (BJT) - Arrays

JESD-609 Code :

e0

Published :

2004

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 10μA 5V

Terminal Position :

BOTTOM

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Collector Emitter Saturation Voltage :

350mV

RoHS Status :

Non-RoHS Compliant

Pbfree Code :

No

Additional Feature :

LOW NOISE

Reach Compliance Code :

not_compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

2

Qualification Status :

Not Qualified

Terminal Form :

Wire

Collector Base Voltage (VCBO) :

45V

ECCN Code :

EAR99

Surface Mount :

No

Max Collector Current :

30mA

Transition Frequency :

60MHz

Max Power Dissipation :

600mW

HTS Code :

8541.21.00.95

Number of Terminations :

6

Packaging :

Bulk

Transistor Element Material :

SILICON

Gain Bandwidth Product :

60MHz

Current - Collector (Ic) (Max) :

30mA

Mounting Type :

Through Hole

Operating Temperature (Max) :

175°C

Element Configuration :

Dual

hFE Min :

60

Terminal Finish :

Tin/Lead (Sn/Pb)

Collector Emitter Voltage (VCEO) :

45V

Package / Case :

TO-78-6 Metal Can

Transistor Type :

2 NPN (Dual)

Polarity :

NPN

JESD-30 Code :

O-MBCY-W6