2N2907AUB
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- Mfr.Part #
- 2N2907AUB
- Manufacturer
- Microchip Technology
- Package / Case
- 3-SMD, No Lead
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.6A UB
- Stock
- 966
- In Stock ：
- 966
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 60V
- Polarity :
- PNP
- Min Operating Temperature :
- -65°C
- Collector Emitter Breakdown Voltage :
- 60V
- Collector Emitter Saturation Voltage :
- 1.6V
- Max Collector Current :
- 600mA
- Factory Lead Time :
- 8 Weeks
- Max Operating Temperature :
- 200°C
- Max Power Dissipation :
- 500mW
- Transistor Type :
- PNP
- Number of Pins :
- 3
- hFE Min :
- 100
- Mounting Type :
- Surface Mount
- Supplier Device Package :
- UB
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 500mW
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 50mA, 500mA
- Published :
- 2005
- Max Junction Temperature (Tj) :
- 200°C
- Collector Base Voltage (VCBO) :
- 60V
- Number of Elements :
- 1
- Package / Case :
- 3-SMD, No Lead
- Current - Collector Cutoff (Max) :
- 50nA
- Operating Temperature :
- -65°C~200°C TJ
- Mount :
- Surface Mount
- Voltage - Collector Emitter Breakdown (Max) :
- 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- RoHS Status :
- Non-RoHS Compliant
- Power - Max :
- 500mW
- Emitter Base Voltage (VEBO) :
- 5V
- Current - Collector (Ic) (Max) :
- 600mA
- Lead Free :
- Contains Lead
- Packaging :
- Bulk
- Height :
- 1.42mm
- Radiation Hardening :
- No
- Datasheets
- 2N2907AUB
PNP -65°C~200°C TJ 50nA 1 Elements 3-SMD, No Lead Bulk Surface Mount
2N2907AUB Overview
This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1.6V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Single BJT transistor comes in a supplier device package of UB.Detection of Collector Emitter Breakdown at 60V maximal voltage is present.The maximum collector current is 600mA volts.
2N2907AUB Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1.6V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the supplier device package of UB
2N2907AUB Applications
There are a lot of Microsemi Corporation
2N2907AUB applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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