2N2906AUB
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- Mfr.Part #
- 2N2906AUB
- Manufacturer
- Microchip Technology
- Package / Case
- 3-SMD, No Lead
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.6A UB
- Stock
- 3,845
- In Stock ：
- 3,845
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 60V
- Power - Max :
- 500mW
- Packaging :
- Bulk
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 2 weeks ago)
- Operating Temperature :
- -65°C~200°C TJ
- Transistor Type :
- PNP
- Radiation Hardening :
- No
- Min Operating Temperature :
- -65°C
- Emitter Base Voltage (VEBO) :
- 5V
- Mount :
- Surface Mount
- Max Operating Temperature :
- 200°C
- RoHS Status :
- Non-RoHS Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 10V
- Voltage - Collector Emitter Breakdown (Max) :
- 60V
- Collector Emitter Breakdown Voltage :
- 60V
- Number of Pins :
- 3
- Published :
- 2002
- Factory Lead Time :
- 12 Weeks
- Collector Emitter Voltage (VCEO) :
- 60V
- Max Collector Current :
- 600mA
- Number of Elements :
- 1
- Package / Case :
- 3-SMD, No Lead
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity :
- PNP
- Power Dissipation :
- 500mW
- Current - Collector Cutoff (Max) :
- 50nA
- Mounting Type :
- Surface Mount
- Current - Collector (Ic) (Max) :
- 600mA
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 50mA, 500mA
- Max Power Dissipation :
- 500mW
- Supplier Device Package :
- UB
- Datasheets
- 2N2906AUB
PNP -65°C~200°C TJ 50nA 1 Elements 3-SMD, No Lead Bulk Surface Mount
2N2906AUB Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 150mA 10V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is no device package available from the supplier for this product.Single BJT transistor shows a 60V maximal voltage - Collector EmSingle BJT transistorter Breakdown.When collector current reaches its maximum, it can reach 600mA volts.
2N2906AUB Features
the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the supplier device package of UB
2N2906AUB Applications
There are a lot of Microsemi Corporation
2N2906AUB applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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