2N2101
- Mfr.Part #
- 2N2101
- Manufacturer
- General Semiconductor
- Package / Case
- TO-211MA, TO-210AC, TO-61-4, Stud
- Datasheet
- Download
- Description
- TRANS NPN 40V 3A TO61
- Stock
- 49,615
- In Stock :
- 49,615
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- Manufacturer :
- General Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 100mA, 1A
- Transistor Type :
- -
- Package / Case :
- TO-211MA, TO-210AC, TO-61-4, Stud
- Operating Temperature :
- -
- Current - Collector (Ic) (Max) :
- 3 A
- Series :
- -
- Package :
- Bulk
- Voltage - Collector Emitter Breakdown (Max) :
- 40 V
- Mounting Type :
- Stud Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 1A, 15V
- Frequency - Transition :
- -
- Current - Collector Cutoff (Max) :
- 30μA (ICBO)
- Supplier Device Package :
- TO-61
- Power - Max :
- 41 W
- Product Status :
- Active
- Datasheets
- 2N2101

- - 30μA (ICBO) TO-211MA, TO-210AC, TO-61-4, Stud Stud Mount
2N2101 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 15 @ 1A, 15V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.2V @ 100mA, 1A.The product comes in the supplier device package of TO-61.A 40 V maximal voltage - Collector Emitter Breakdown is present in the device.
2N2101 Features
the DC current gain for this device is 15 @ 1A, 15V
the vce saturation(Max) is 1.2V @ 100mA, 1A
the supplier device package of TO-61
2N2101 Applications
There are a lot of General Semiconductor
2N2101 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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