2N1131
- Mfr.Part #
- 2N1131
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- POWER BJT
- Stock
- 14,829
- In Stock :
- 14,829
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- BOTTOM
- Series :
- --
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Surface Mount :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 150mA, 10V
- JESD-609 Code :
- e0
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Current - Collector (Ic) (Max) :
- 600mA
- JESD-30 Code :
- O-MBCY-W3
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Terminal Form :
- Wire
- Mounting Type :
- Through Hole
- Power - Max :
- 2W
- Packaging :
- Bulk
- HTS Code :
- 8541.21.00.95
- Collector Current-Max (IC) :
- 0.6A
- Number of Terminations :
- 3
- Published :
- 2017
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 15mA, 150mA
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- DC Current Gain-Min (hFE) :
- 20
- RoHS Status :
- Non-RoHS Compliant
- Frequency - Transition :
- 50MHz
- Configuration :
- Single
- Transition Frequency :
- 50MHz
- Current - Collector Cutoff (Max) :
- 100µA (ICBO)
- Transistor Type :
- PNP
- Factory Lead Time :
- 6 Weeks
- Collector-Emitter Voltage-Max :
- 35V
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- JEDEC-95 Code :
- TO-39
- Supplier Device Package :
- TO-39
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Polarity/Channel Type :
- PNP
- Reach Compliance Code :
- not_compliant
- Datasheets
- 2N1131
PNP -65°C ~ 200°C (TJ) 100µA (ICBO) 1 Elements 3 Terminations SILICON PNP TO-205AD, TO-39-3 Metal Can Bulk Through Hole
2N1131 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 150mA, 10V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 15mA, 150mA.A transition frequency of 50MHz is present in the part.The product comes in the supplier device package of TO-39.There is a setting of 35V for maximal collector-Emitter voltage.A 50V maximal voltage - Collector Emitter Breakdown is present in the device.
2N1131 Features
the DC current gain for this device is 20 @ 150mA, 10V
the vce saturation(Max) is 1.5V @ 15mA, 150mA
a transition frequency of 50MHz
the supplier device package of TO-39
2N1131 Applications
There are a lot of Central Semiconductor
2N1131 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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