ZXT953KTC
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- Mfr.Part #
- ZXT953KTC
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 100V 5A TO252-3
- Stock
- 4,096
- In Stock ：
- 4,096
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 4.2W
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- Published :
- 2006
- Height :
- 2.39mm
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Number of Elements :
- 1
- Length :
- 6.73mm
- Transition Frequency :
- 125MHz
- Weight :
- 260.39037mg
- Gain Bandwidth Product :
- 125MHz
- Pbfree Code :
- No
- ECCN Code :
- EAR99
- Current Rating :
- -5A
- Width :
- 6.22mm
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- 260
- Collector Base Voltage (VCBO) :
- 140V
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Polarity/Channel Type :
- PNP
- Voltage - Rated DC :
- -100V
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- -7V
- REACH SVHC :
- No SVHC
- Base Part Number :
- ZXT953
- Pin Count :
- 3
- Terminal Form :
- Gull wing
- Radiation Hardening :
- No
- Transistor Type :
- PNP
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Breakdown Voltage :
- 100V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Vce Saturation (Max) @ Ib, Ic :
- 390mV @ 500mA, 5A
- JESD-30 Code :
- R-PSSO-G2
- Number of Terminations :
- 2
- Transistor Element Material :
- SILICON
- Power - Max :
- 4.2W
- Terminal Finish :
- Matte Tin (Sn)
- Collector Emitter Voltage (VCEO) :
- 390mV
- Collector Emitter Breakdown Voltage :
- 100V
- Max Collector Current :
- 5A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 1V
- Case Connection :
- COLLECTOR
- Factory Lead Time :
- 15 Weeks
- Collector Emitter Saturation Voltage :
- -335mV
- Datasheets
- ZXT953KTC
PNP -55°C~150°C TJ 20nA ICBO 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
ZXT953KTC Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 1A 1V.With a collector emitter saturation voltage of -335mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 390mV @ 500mA, 5A.If the emitter base voltage is kept at -7V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -5A.A transition frequency of 125MHz is present in the part.There is a breakdown input voltage of 100V volts that it can take.Collector current can be as low as 5A volts at its maximum.
ZXT953KTC Features
the DC current gain for this device is 100 @ 1A 1V
a collector emitter saturation voltage of -335mV
the vce saturation(Max) is 390mV @ 500mA, 5A
the emitter base voltage is kept at -7V
the current rating of this device is -5A
a transition frequency of 125MHz
ZXT953KTC Applications
There are a lot of Diodes Incorporated
ZXT953KTC applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| ZXT951KQTC | Diodes Incorporated | 2,500 | TRANS PNP 60V 6A TO252 |
| ZXT951KTC | Diodes Incorporated | 9 | TRANS PNP 60V 6A TO252-3 |
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