ZXT953KTC
- Mfr.Part #
- ZXT953KTC
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 100V 5A TO252-3
- Stock
- 4,096
- In Stock :
- 4,096
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- PNP
- Voltage - Rated DC :
- -100V
- JESD-30 Code :
- R-PSSO-G2
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Pin Count :
- 3
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Pbfree Code :
- No
- Terminal Finish :
- Matte Tin (Sn)
- Transition Frequency :
- 125MHz
- Vce Saturation (Max) @ Ib, Ic :
- 390mV @ 500mA, 5A
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 100V
- Height :
- 2.39mm
- Gain Bandwidth Product :
- 125MHz
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Power - Max :
- 4.2W
- Current Rating :
- -5A
- Weight :
- 260.39037mg
- Transistor Application :
- SWITCHING
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Length :
- 6.73mm
- Width :
- 6.22mm
- Packaging :
- Tape and Reel (TR)
- Max Breakdown Voltage :
- 100V
- Base Part Number :
- ZXT953
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- REACH SVHC :
- No SVHC
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Collector Current :
- 5A
- Collector Emitter Saturation Voltage :
- -335mV
- Transistor Element Material :
- SILICON
- Published :
- 2006
- Peak Reflow Temperature (Cel) :
- 260
- Radiation Hardening :
- No
- Operating Temperature :
- -55°C~150°C TJ
- Emitter Base Voltage (VEBO) :
- -7V
- Collector Base Voltage (VCBO) :
- 140V
- Number of Elements :
- 1
- Mount :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 390mV
- Number of Terminations :
- 2
- JESD-609 Code :
- e3
- Transistor Type :
- PNP
- Factory Lead Time :
- 15 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 1V
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 4.2W
- Terminal Form :
- Gull wing
- Case Connection :
- COLLECTOR
- Datasheets
- ZXT953KTC

PNP -55°C~150°C TJ 20nA ICBO 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
ZXT953KTC Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 1A 1V.With a collector emitter saturation voltage of -335mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 390mV @ 500mA, 5A.If the emitter base voltage is kept at -7V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -5A.A transition frequency of 125MHz is present in the part.There is a breakdown input voltage of 100V volts that it can take.Collector current can be as low as 5A volts at its maximum.
ZXT953KTC Features
the DC current gain for this device is 100 @ 1A 1V
a collector emitter saturation voltage of -335mV
the vce saturation(Max) is 390mV @ 500mA, 5A
the emitter base voltage is kept at -7V
the current rating of this device is -5A
a transition frequency of 125MHz
ZXT953KTC Applications
There are a lot of Diodes Incorporated
ZXT953KTC applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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