ZXT849KTC

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Mfr.Part #
ZXT849KTC
Manufacturer
Diodes Incorporated
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
TRANS NPN 30V 7A TO252-3
Stock
5,496
In Stock :
5,496

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
Peak Reflow Temperature (Cel) :
260
Current Rating :
7A
Width :
6.22mm
Transition Frequency :
100MHz
Time@Peak Reflow Temperature-Max (s) :
30
Number of Terminations :
2
Terminal Form :
Gull wing
Lead Free :
Lead Free
Collector Emitter Breakdown Voltage :
30V
Emitter Base Voltage (VEBO) :
7V
Packaging :
Tape and Reel (TR)
Power Dissipation :
4.2W
REACH SVHC :
No SVHC
Factory Lead Time :
15 Weeks
Vce Saturation (Max) @ Ib, Ic :
280mV @ 350mA, 7A
RoHS Status :
ROHS3 Compliant
Pbfree Code :
No
Case Connection :
COLLECTOR
Collector Emitter Voltage (VCEO) :
30V
Max Breakdown Voltage :
30V
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Weight :
350.003213mg
Radiation Hardening :
No
Length :
6.73mm
Current - Collector Cutoff (Max) :
20nA ICBO
Frequency :
100MHz
Transistor Application :
SWITCHING
Element Configuration :
Single
Voltage - Rated DC :
30V
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 1A 1V
ECCN Code :
EAR99
Transistor Type :
NPN
Continuous Collector Current :
7A
Max Collector Current :
7A
Published :
2006
Max Power Dissipation :
4.2W
Terminal Finish :
Matte Tin (Sn)
Collector Emitter Saturation Voltage :
230mV
Number of Pins :
3
Collector Base Voltage (VCBO) :
80V
Base Part Number :
ZXT849
Mounting Type :
Surface Mount
Mount :
Surface Mount
JESD-30 Code :
R-PSSO-G2
Polarity/Channel Type :
NPN
Operating Temperature :
-55°C~150°C TJ
Height :
2.39mm
Gain Bandwidth Product :
100MHz
JESD-609 Code :
e3
Number of Elements :
1
Pin Count :
3
Transistor Element Material :
SILICON
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Datasheets
ZXT849KTC
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated ZXT849KTC from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Number of Pins:3, Base Part Number:ZXT849, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, ZXT849KTC pinout, ZXT849KTC datasheet PDF, ZXT849KTC amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated ZXT849KTC ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated ZXT849KTC


NPN -55°C~150°C TJ 20nA ICBO 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount

ZXT849KTC Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 1A 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 230mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 280mV @ 350mA, 7A.Continuous collector voltages of 7A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Its current rating is 7A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 30V volts.During maximum operation, collector current can be as low as 7A volts.

ZXT849KTC Features


the DC current gain for this device is 100 @ 1A 1V
a collector emitter saturation voltage of 230mV
the vce saturation(Max) is 280mV @ 350mA, 7A
the emitter base voltage is kept at 7V
the current rating of this device is 7A
a transition frequency of 100MHz


ZXT849KTC Applications


There are a lot of Diodes Incorporated
ZXT849KTC applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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