ZXT849KTC
- Mfr.Part #
- ZXT849KTC
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 30V 7A TO252-3
- Stock
- 5,496
- In Stock :
- 5,496
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Peak Reflow Temperature (Cel) :
- 260
- Current Rating :
- 7A
- Width :
- 6.22mm
- Transition Frequency :
- 100MHz
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Number of Terminations :
- 2
- Terminal Form :
- Gull wing
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 30V
- Emitter Base Voltage (VEBO) :
- 7V
- Packaging :
- Tape and Reel (TR)
- Power Dissipation :
- 4.2W
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 15 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 280mV @ 350mA, 7A
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- No
- Case Connection :
- COLLECTOR
- Collector Emitter Voltage (VCEO) :
- 30V
- Max Breakdown Voltage :
- 30V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Weight :
- 350.003213mg
- Radiation Hardening :
- No
- Length :
- 6.73mm
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Frequency :
- 100MHz
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Voltage - Rated DC :
- 30V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 1V
- ECCN Code :
- EAR99
- Transistor Type :
- NPN
- Continuous Collector Current :
- 7A
- Max Collector Current :
- 7A
- Published :
- 2006
- Max Power Dissipation :
- 4.2W
- Terminal Finish :
- Matte Tin (Sn)
- Collector Emitter Saturation Voltage :
- 230mV
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- 80V
- Base Part Number :
- ZXT849
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- JESD-30 Code :
- R-PSSO-G2
- Polarity/Channel Type :
- NPN
- Operating Temperature :
- -55°C~150°C TJ
- Height :
- 2.39mm
- Gain Bandwidth Product :
- 100MHz
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- ZXT849KTC

NPN -55°C~150°C TJ 20nA ICBO 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
ZXT849KTC Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 1A 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 230mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 280mV @ 350mA, 7A.Continuous collector voltages of 7A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Its current rating is 7A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 30V volts.During maximum operation, collector current can be as low as 7A volts.
ZXT849KTC Features
the DC current gain for this device is 100 @ 1A 1V
a collector emitter saturation voltage of 230mV
the vce saturation(Max) is 280mV @ 350mA, 7A
the emitter base voltage is kept at 7V
the current rating of this device is 7A
a transition frequency of 100MHz
ZXT849KTC Applications
There are a lot of Diodes Incorporated
ZXT849KTC applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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