ZXMP6A17DN8TA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Terminations :

8

Power - Max :

1.81W

FET Type :

2 P-Channel (Dual)

Voltage - Rated DC :

-60V

Mounting Type :

Surface Mount

Width :

4mm

FET Feature :

Logic Level Gate

Time@Peak Reflow Temperature-Max (s) :

40

Max Power Dissipation :

2.15W

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

637pF @ 30V

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

60V

Number of Pins :

8

Pulsed Drain Current-Max (IDM) :

11.1A

Pbfree Code :

yes

Factory Lead Time :

17 Weeks

Number of Elements :

2

RoHS Status :

ROHS3 Compliant

Resistance :

125mOhm

Peak Reflow Temperature (Cel) :

260

Fall Time (Typ) :

11.3 ns

Gate to Source Voltage (Vgs) :

20V

Terminal Finish :

Matte Tin (Sn)

Element Configuration :

Dual

Continuous Drain Current (ID) :

3.2A

Current Rating :

-3.1A

Turn On Delay Time :

2.6 ns

Vgs(th) (Max) @ Id :

1V @ 250μA (Min)

Gate Charge (Qg) (Max) @ Vgs :

17.7nC @ 10V

Packaging :

Tape and Reel (TR)

Pin Count :

8

Rds On (Max) @ Id, Vgs :

125m Ω @ 2.3A, 10V

Mount :

Surface Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Turn-Off Delay Time :

26.2 ns

Power Dissipation :

2.15W

Number of Channels :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Contains Lead

Height :

1.5mm

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Case Connection :

DRAIN

Published :

2006

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Length :

5mm

REACH SVHC :

No SVHC

Weight :

73.992255mg

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

2.7A

Rise Time :

3.4ns

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON