ZXMP6A16DN8TC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Pulsed Drain Current-Max (IDM) :

18.3A

Drain-source On Resistance-Max :

0.085Ohm

Gate Charge (Qg) (Max) @ Vgs :

24.2nC @ 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Type :

2 P-Channel (Dual)

Vgs(th) (Max) @ Id :

1V @ 250μA (Min)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

1.25W

Number of Elements :

2

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

8

Terminal Finish :

Matte Tin (Sn)

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

FET Feature :

Standard

Factory Lead Time :

17 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

1021pF @ 30V

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

40

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Pin Count :

8

JESD-30 Code :

R-PDSO-G8

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

ECCN Code :

EAR99

Power - Max :

1.25W

Published :

2006

Continuous Drain Current (ID) :

2.9A

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

60V

DS Breakdown Voltage-Min :

60V

Packaging :

Tape and Reel (TR)

Qualification Status :

Not Qualified

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

85m Ω @ 2.9A, 10V