ZXMP6A16DN8QTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Max Power Dissipation :

1.81W

Element Configuration :

Dual

Terminal Finish :

Matte Tin (Sn)

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

30

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Reference Standard :

AEC-Q101

Factory Lead Time :

15 Weeks

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

1V @ 250μA (Min)

Published :

2002

Number of Channels :

2

Operating Temperature :

-55°C~150°C TJ

Additional Feature :

High Reliability

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

85m Ω @ 2.9A, 10V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Transistor Application :

SWITCHING

Turn-Off Delay Time :

35 ns

RoHS Status :

ROHS3 Compliant

Rise Time :

4.1ns

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

2 P-Channel (Dual)

Input Capacitance (Ciss) (Max) @ Vds :

1021pF @ 30V

DS Breakdown Voltage-Min :

60V

Number of Elements :

2

Turn On Delay Time :

3.5 ns

Continuous Drain Current (ID) :

2.9A

Gate Charge (Qg) (Max) @ Vgs :

24.2nC @ 10V

Number of Terminations :

8

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

10 ns

Mount :

Surface Mount

Number of Pins :

8

Peak Reflow Temperature (Cel) :

260

Drain to Source Voltage (Vdss) :

60V

FET Feature :

Logic Level Gate

Weight :

73.992255mg