ZXMP3A16DN8TA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Peak Reflow Temperature (Cel) :

260

Additional Feature :

LOW THRESHOLD

Voltage - Rated DC :

-30V

Height :

1.5mm

Vgs(th) (Max) @ Id :

1V @ 250μA (Min)

FET Feature :

Logic Level Gate

Rds On (Max) @ Id, Vgs :

45m Ω @ 4.2A, 10V

Turn On Delay Time :

3.8 ns

Pin Count :

8

Published :

2007

JESD-609 Code :

e3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Fall Time (Typ) :

21.4 ns

Terminal Finish :

Matte Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

4.2A

ECCN Code :

EAR99

Resistance :

45mOhm

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

1022pF @ 15V

Radiation Hardening :

No

Continuous Drain Current (ID) :

5.5A

Mounting Type :

Surface Mount

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

-30V

Weight :

73.992255mg

Factory Lead Time :

17 Weeks

Turn-Off Delay Time :

37.1 ns

Drain to Source Voltage (Vdss) :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Number of Pins :

8

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Length :

5mm

Rise Time :

6.5ns

Max Power Dissipation :

2.1W

Number of Channels :

2

Operating Temperature :

-55°C~150°C TJ

FET Type :

2 P-Channel (Dual)

Number of Elements :

2

Width :

4mm

Number of Terminations :

8

Current Rating :

-5.5A

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

29.6nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

40

Power - Max :

1.8W

Power Dissipation :

2.1W