ZDX080N50

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-220-3 Full Pack

JEDEC-95 Code :

TO-220AB

Operating Temperature :

150°C TJ

DS Breakdown Voltage-Min :

500V

Drain Current-Max (Abs) (ID) :

8A

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

1120pF @ 25V

Vgs(th) (Max) @ Id :

4V @ 1mA

Drain to Source Voltage (Vdss) :

500V

Transistor Application :

SWITCHING

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.85Ohm

Packaging :

Bulk

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

Continuous Drain Current (ID) :

8A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

13 Weeks

Number of Terminations :

3

Vgs (Max) :

±30V

Lead Free :

Lead Free

Case Connection :

Isolated

Published :

2012

Rds On (Max) @ Id, Vgs :

850m Ω @ 4A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

24A

JESD-30 Code :

R-PSFM-T3

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Terminal Position :

Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

40W Tc

Operating Mode :

ENHANCEMENT MODE

Mount :

Through Hole