ZDX050N50

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

5A

Vgs(th) (Max) @ Id :

4.4V @ 1mA

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

600pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Drain to Source Voltage (Vdss) :

500V

Power Dissipation-Max :

40W Tc

Number of Terminations :

3

Transistor Application :

SWITCHING

Packaging :

Bulk

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PSFM-T3

Operating Temperature :

150°C TJ

Rds On (Max) @ Id, Vgs :

1.5 Ω @ 2.5A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

JEDEC-95 Code :

TO-220AB

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Package / Case :

TO-220-3 Full Pack

Case Connection :

Isolated

Lead Free :

Lead Free

DS Breakdown Voltage-Min :

500V

Published :

2012

FET Type :

N-Channel

Continuous Drain Current (ID) :

5A

Vgs (Max) :

±30V

Mount :

Through Hole