ZDT751TA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Collector Base Voltage (VCBO) :

80V

Published :

1997

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

40

Current - Collector Cutoff (Max) :

100nA ICBO

JESD-609 Code :

e3

Length :

6.7mm

Vce Saturation (Max) @ Ib, Ic :

500mV @ 200mA, 2A

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Collector Emitter Voltage (VCEO) :

60V

Max Collector Current :

2A

Continuous Collector Current :

-2A

Width :

3.7mm

Power Dissipation :

2.75W

Collector Emitter Saturation Voltage :

-280mV

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Pbfree Code :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Frequency :

140MHz

Number of Pins :

8

Factory Lead Time :

15 Weeks

Current Rating :

-2A

Pin Count :

3

Number of Terminations :

8

Emitter Base Voltage (VEBO) :

-5V

Transistor Type :

2 PNP (Dual)

Transistor Element Material :

SILICON

Element Configuration :

Dual

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Max Breakdown Voltage :

60V

Terminal Finish :

Matte Tin (Sn)

Lead Free :

Lead Free

Height :

1.6mm

Package / Case :

8-SMD, Gull Wing

Gain Bandwidth Product :

140MHz

Number of Elements :

2

Base Part Number :

ZDT751

Max Power Dissipation :

2.75W

Transition Frequency :

140MHz

Collector Emitter Breakdown Voltage :

60V

Voltage - Rated DC :

-60V

Polarity :

PNP

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 500mA 2V

Radiation Hardening :

No